WSO:
SI BIPOLAR AND CMOS MM-WAVE ICS – FROM PROCESS TO CIRCUIT DESIGN AND APPLICATIONS

Date & Time: Sunday, June 11; 8:00 AM to 5:00 PM

Location: Moscone Convention Center, TBD

Topics & Speakers:

• Millimeter Wave ICs for System Applications: Design Methodology and Challenges, Debabani Choudhury, Intel
• From Transmission Lines to Transceivers: Silicon Millimeter-wave ICs for 60 GHz and Beyond, Brian A. Floyd, IBM
• SiGe BiCMOS mm-wave SoC Transceiver Design, Noyan Kinayman, M/A-COM Strategic Res. and Dev.
• Design Techniques in Millimeter-wave Range Using Conventional SiGeC BiCMOS Technology, Sebastien Pruvost, STMicroelectronics
• Extending RF-CMOS to mm-wave Applications, John J. Pekarik, IBM Semiconductor Res. and Dev. Ctr.
• Perspectives of Downscaled CMOS for RFIC and mm-wave Applications, Stefaan Decoutere, IMEC, Belgium
• 0–60 GHz in Three Years: mm-Wave CMOS Research at BWRC, Ali M. Niknejad, UC at Berkeley, CA
• Analog Integrated Circuits on VLSI SOI CMOS for High-Speed Wireless Communication up to 60 GHz, Frank Ellinger, ETH/IBM, Electronics Lab.
• Design Techniques for mm-wave CMOS Circuits, Herbert Zirath, Charlmers University of Technology
• CMOS mm-wave IC Designs: VCOs and Amplifiers, Huei Wang, National Taiwan University

Organizers:

Hiroshi Kondoh, Hitachi Central Res Lab.
Luciano Boglione, IECi

Sponsors:

MTT-23: RFIC
MTT-6 Microwave and Millimeter-Wave ICs
IMS2006

This workshop will concentrate on the efforts currently under way in the mm-wave arena to enable silicon-based applications. The potential advantages of the silicon technology are obvious: more integration and lower costs. However, the challenges that silicon brings about cannot be underestimated: circuit designers must develop new skills to cope with a lossy substrate coupled with intrinsic device limitations. While the SiGe bipolar device is emerging as a feasible solution to the design of mmwave circuits, pure CMOS solutions are also being considered as commercial 0.13 and 0.09 mm CMOS processes are paving the way to even more exciting opportunities. This full day workshop will be structured in 2 parts: Part I will focus on SiGe bipolar designs with the intent of discussing the technical and practical challenges that designers face in the mm-wave range as they reach higher and higher frequencies of operation. Part II will look into the current and future status of pure CMOS technologies and review the related state-of-the-art results. The business challenges related to mm-wave applications will also be considered during these presentations.