Session Chair:

Aditya Gupta
Anadigics

Session Co-Chair:

Eli Reese
TriQuint

Time

Title

1:20 PM

TU2C-1 Invited
Characterization of Diodes as RF ESD Protection Structures

Guang Chen*, Haigang Feng*, Haolu Xie*, Rouying Zhan*, Qiong Wu*, Xiaokang Guan*,
Albert Wang*, Kaoru Takasuka** and Satoru Tamura**
*Illinois Institute of Technology,
**Asahi Kasei Microsystems Co., Ltd.

1:40 PM

TU2C-2
ESD Protection Design for Broadband RF Circuits With Decreasing-Size Distributed Protection Scheme

Ming-Dou Ker and Bing-Jye Kuo National Chiao-Tung University

2:00 PM

TU2C-3
Reliability Evaluation of Gilbert Cell Mixer Based On a Hot-Carrier Stressed Device Degradation Model

Wei-Cheng Lin*, Long-Jei Du, Ya-Chin King
National Tsing-Hua University

2:20 PM

TU2C-4
Improved InGaP/GaAs HBTs AC Performance and Linearity with Collector Design

C.M. Wang*, H.T. Hsu, H.C. Shu, Y.A. Liu and Y.M. Hsin**
National Central University
*
**

2:40 PM

TU2C-5
SiGe HBTs for Millimeter-Wave Applications with Simultaneously Optimized fT and fmax of 300 GHz

J. -S. Rieh, D. Greenberg*, M. Khater, K. T. Schonenberg*, S. -J. Jeng, F. Pagette, T. Adam, A. Chinthakindi, J. Florkey, B. Jagannathan, J. Johnson**, R. Krishnasamy**, D. Sanderson, C. Schnabel, P. Smith, A. Stricker**, S. Sweeney**, K. Vaed, T. Yanagisawa, D. Ahlgren, K. Stein, and G. Freeman
IBM Semiconductor R & D Center,
*IBM T. J. Watson Research Center,
**IBM Semiconductor R & D Center