Session Chair:

Yuhua Cheng
Skyworks solutions, inc.

Session Co-Chair:

Kevin McCarthy
UCC

Time

Title

1:20 PM

MO4C-1
Large-signal Millimeter-wave CMOS Modeling with BSIM3

Sohrab Emami, Chinh H. Doan, Ali M. Niknejad, and Robert W. Brodersen
University of California, Berkeley

1:40 PM

MO4C-2
Foundry 0.13 um CMOS Modeling for MS/mWave SOC Design

M.T. Yang 1, T.J. Yeh1, Y. J. Wang 1, Patricia P.C. Ho 1, Y. R. Lin1, Darry C.W. Kuo 1, Sorin P. Voinigescu 2, Mihai Tazlauanu 3, Y.T. Chia 1, K.L. Young 1
1 TSMC,
2 University of Toronto,
3 Quake Technologies Inc.

2:00 PM

MO4C-3
Modeling Finger Number Dependence on RF Noise to 10 GHz in 0.13µm Node MOSFETs with 80nm Gate Length

M.C. King*, Z. M. Lai*, C. H. Huang*,***, C. F. Lee*, M. W. Ma*, C. M. Huang**, Yun
Chang** and Albert Chin*
* National Chiao Tung University,
** TSMC
***Currently at TSMC

2:20 PM

MO4C-4
A Distributed Scalable SiGe Power Device Large Signal Model Based on MEXTRAM 504

S.-W. Yoon, J. Laskar, D. H. Cho*, K. S. Hong*, H.J. Shin*, K.W. Park*, S.D. Yi*, K.P. Suh*
Georgia Institute of Technology
* Samsung Electronics Co., LTD.

2:40 PM

MO4C-5
Effects of Buried Layers Doping Rate On Substrate Noise Coupling: Efficiency of DeepTrench Techniques to Improve Isolation Capability

S. Wane*, D. Bajon**, H. Baudrand1, C. Biard***, J. Langanay*** and P. Gamand*
*1ENSEEIHT
** rue Camichel
*** Philips Semiconductors